ASSR-302C

Low C x R, Form A, Solid State Relay (Photo MOSFET)

ASSR-302C

Compact Solid-State Bi-directional Signal Switch

ASSR-302C-002E

Package：8-DIP（0.300"，7.62mm）；包装：散装 类别：继电器 固态继电器 描述：SSR RELAY SPST-NO 50MA 0-250V

Broadcom Limited

ASSR-302C-302E

Package：8-SMD（0.300"，7.62mm）；包装：散装 类别：继电器 固态继电器 描述：SSR RELAY SPST-NO 50MA 0-250V

Broadcom Limited

ASSR-302C-302E

Package：8-SMD（0.300"，7.62mm）；包装：散装 类别：继电器 固态继电器 描述：SSR RELAY SPST-NO 50MA 0-250V

Broadcom Limited

AT302

PHASECONTROLTHYRISTOR

PHASECONTROLTHYRISTOR Repetitivevoltageupto800V Meanon-statecurrent995A Surgecurrent12kA

ATP302

P-ChannelSiliconMOSFETGeneral-PurposeSwitchingDeviceApplications

General-PurposeSwitchingDeviceApplications Features •ON-resistanceRDS(on)1=10mΩ(typ.) •4.5Vdrive •InputcapacitanceCiss=5400pF(typ.) •Halogenfreecompliance

ATP302

P-ChannelPowerMOSFET

P-ChannelPowerMOSFET –60V,–70A,13mΩ,ATPAK Features •ON-resistanceRDS(on)1=10mΩ(typ.) •4.5Vdrive •InputcapacitanceCiss=5400pF(typ.) •Halogenfreecompliance

ATP302

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=-70A@TC=25℃ ·DrainSourceVoltage :VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=19.5mΩ(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordri

ATP302-TL-H

P-ChannelPowerMOSFET

P-ChannelPowerMOSFET –60V,–70A,13mΩ,ATPAK Features •ON-resistanceRDS(on)1=10mΩ(typ.) •4.5Vdrive •InputcapacitanceCiss=5400pF(typ.) •Halogenfreecompliance