BD808

iscSiliconPNPPowerTransistor

DESCRIPTION •DCCurrentGain-:hFE=30@IC=-2A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=-60V(Min) •ComplementtoTypeBD807 APPLICATIONS •Designedforuseinhighpoweraudioamplifiersutilizingcomplementaryorquasicomplementarycircuits.

BD808

PlasticHighPowerSiliconPNPTransistor

PlasticHighPowerSiliconPNPTransistor ...designedforuseinhighpoweraudioamplifiersutilizingcomplementaryorquasicomplementarycircuits. •DCCurrentGain—hFE=30(Min)@IC=2.0Adc •BD808,810arecomplementarywithBD807,890

BD808

SiliconPNPPowerTransistor

DESCRIPTION •DCCurrentGain-:hFE=30@lc=-2A •Collector-EmitterSustainingVoltage-:VCEo(sus)=-60V(Min) •ComplementtoTypeBD807 APPLICATIONS •Designedforuseinhighpoweraudioamplifiersutilizingcomplementaryorquasicomplementarycircuits.

BL808

2.4GHzRFtransceiver

•Wireless(Tier-1RFPerformance) –2.4GHzRFtransceiver –Wi-Fi802.11b/g/n –Bluetooth®5.xDual-mode(BT+BLE) –Zigbee/IEEE802.15.4 –Wi-Fi/Bluetooth/ZigbeeCoexistence –Integratedbalun,PA/LNA –SupportExternalPA/LNA •Microcontroller –Multi-CoreRISC-VCPUs(MaxFreq480M

BR808

SILICONBRIDGERECTIFIERS

PRV:50-1000Volts Io:8.0Amperes FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Idealforprintedcircuitboard *Pb/RoHSFree

BR808

SILICONBRIDGERECTIFIERS

BR808

SiliconBridgeRectifiers8Ampsto10Amps

SiliconBridgeRectifiers8Ampsto10Amps TheplasticmaterialcarriesU/Lrecognition94V-O

BR808

SILICONBRIDGERECTIFIERS

REVERSEVOLTAGE-50to1000Volts FORWARDCURRENT-8.0Amperes FEATURES ●Surgeoverloadrating-200amperespeak ●Lowforwardvoltagedrop ●Smallsize;simpleinstallation ●Sliverplatedcopperleads ●Mountingposition:Any

BR808

SILICONBRIDGERECTIFIERS

BR808

SILICONBRIDGERECTIFIERS