ASC30N1200MT4中文资料ETC数据手册PDF规格书

描述 Description

Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching

performance and higher reliability compared to Silicon. In addition, the low ON resistance and

compact chip size ensure low capacitance and gate charge. Consequently, system benefits include

highest efficiency, faster operating frequency, increased power density, reduced EMI, and

reduced system size.

特性 Features

 High Speed Switching with Low Capacitances

 High Blocking Voltage with Low RDS(on)

 Optimized package with separate driver source pin

 Easy to parallel and simple to drive

 ROHS Compliant, Halogen free

Application

 EV Charging

 High Voltage DC/DC Converters

 Switch Mode Power Supplies

 Power Factor Correction Modules