AS7C513B-12TI中文资料ALSC数据手册PDF规格书

Functional description

The AS7C513B is a high performance CMOS 524,288-bit Static Random Access Memory (SRAM) device organized as 32,768 words × 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired.

Features

• Industrial and commercial temperature

• Organization: 32,768 words × 16 bits

• Center power and ground pins

• High speed

• 10/12/15/20 ns address access time

• 5, 6, 7, 8 ns output enable access time

• Low power consumption: ACTIVE

• 605mW / max @ 10 ns

• Low power consumption: STANDBY

• 55 mW / max CMOS I/O

• 6T 0.18u CMOS Technology

• Easy memory expansion with CE, OE inputs

• TTL-compatible, three-state I/O

• 44-pin JEDEC standard package

• 400 mil SOJ

• 400 mil TSOP 2

• ESD protection ≥ 2000 volts

• Latch-up current ≥ 200 mA