AS7C33256PFD18B-166TQI中文资料ALSC数据手册PDF规格书

Functional description

The AS7C33256PFD18B is a high performance CMOS 4 Mbit synchronous Static Random Access Memory (SRAM) devices organized as 262,144 words × 18 bits and incorporate a pipeline for highest frequency on any given technology.

特性 Features

• Organization: 262,144 words × 18 bits

• Fast clock speeds to 200 MHz

• Fast clock to data access: 3.0/3.5/4.0 ns

• Fast OE access time: 3.0/3.5/4.0 ns

• Fully synchronous register-to-register operation

• Double-cycle deselect

• Asynchronous output enable control

• Available in 100-pin TQFP package

• Individual byte write and global write

• Multiple chip enables for easy expansion

• Linear or interleaved burst control

• Snooze mode for reduced power-standby

• Common data inputs and data outputs

• 3.3V core power supply

• 2.5V or 3.3V I/O operation with separate VDDQ