AS7C31026-12JC中文资料ALSC数据手册PDF规格书

Functional description

The AS7C1026 and AS7C31026 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 65,536 words x 16 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired.

特性 Features

• AS7C1026 (5V version)

• AS7C31026 (3.3V version)

• Industrial and commercial versions

• Organization: 65,536 words x 16 bits

• Center power and ground pins for low noise

• High speed

- 12/15/20 ns address access time

- 6,7,8 ns output enable access time

• Low power consumption: ACTIVE

- 880 mW (AS7C1026) / max @ 12 ns

- 396 mW (AS7C31026) / max @ 12 ns

• Low power consumption: STANDBY

- 28 mW (AS7C1026) / max CMOS I/O

- 18 mW (AS7C31026) / max CMOS I/O

• 2.0V data retention

• Easy memory expansion with CE, OE inputs

• TTL-compatible, three-state I/O

• JEDEC standard packaging

- 44-pin 400 mil SOJ

- 44-pin 400 mil TSOP II

- 48-ball 6 mm × 8 mm CSP mBGA

• ESD protection ≥ 2000 volts

• Latch-up current ≥ 200 mA