AS7C31025B-10TJC

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functionaldescription TheAS7C31025Bisahigh-performanceCMOS1,048,576-bitStaticRandomAccessMemory(SRAM)deviceorganizedas131,072x8bits.Itisdesignedformemoryapplicationswherefastdataaccess,lowpower,andsimpleinterfacingaredesired. Features •Industrialandcommerc

AS7C31025B-10TJCN

3.3V 128K X 8 CMOS SRAM (Center power and ground)

Functionaldescription TheAS7C31025Bisahigh-performanceCMOS1,048,576-bitStaticRandomAccessMemory(SRAM)deviceorganizedas131,072x8bits.Itisdesignedformemoryapplicationswherefastdataaccess,lowpower,andsimpleinterfacingaredesired. Features •Industrialandcommerc

AS7C31025B-10TJCN

3.3 V 128K x 8 CMOS SRAM;

ETC

AS7C31025B-10TJCN

Package：32-BSOJ（0.300"，7.62mm 宽）；包装：管件 类别：集成电路（IC） 存储器 描述：IC SRAM 1MBIT PARALLEL 32SOJ

AS7C31025B-10TJCNTR

Package：32-BSOJ（0.300"，7.62mm 宽）；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 1MBIT PARALLEL 32SOJ

AS7C31025B-10TJI

3.3V128KX8CMOSSRAM(Centerpowerandground)

Functionaldescription TheAS7C31025Bisahigh-performanceCMOS1,048,576-bitStaticRandomAccessMemory(SRAM)deviceorganizedas131,072x8bits.Itisdesignedformemoryapplicationswherefastdataaccess,lowpower,andsimpleinterfacingaredesired. Features •Industrialandcommerc

AS7C31025B-10TJIN

3.3V128KX8CMOSSRAM(Centerpowerandground)

Functionaldescription TheAS7C31025Bisahigh-performanceCMOS1,048,576-bitStaticRandomAccessMemory(SRAM)deviceorganizedas131,072x8bits.Itisdesignedformemoryapplicationswherefastdataaccess,lowpower,andsimpleinterfacingaredesired. Features •Industrialandcommerc