AS7C1026B-12JIN中文资料ALSC数据手册PDF规格书

Functional description

The AS7C1026B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device organized as 65,536 words × 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired.

特性 Features

• Industrial and commercial versions

• Organization: 65,536 words × 16 bits

• Center power and ground pins for low noise

• High speed

- 10/12/15/20 ns address access time

- 5, 6, 7, 8 ns output enable access time

• Low power consumption: ACTIVE

- 605 mW / max @ 10 ns

• Low power consumption: STANDBY

- 55 mW / max CMOS I/O

• 6 T 0.18 u CMOS technology

• Easy memory expansion with CE, OE inputs

• TTL-compatible, three-state I/O

• JEDEC standard packaging

- 44-pin 400 mil SOJ

- 44-pin TSOP 2-400

• ESD protection ≥ 2000 volts

• Latch-up current ≥ 200 mA