5V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C1025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and comm

文件：103.68 Kbytes 页数：9 Pages

ALSC

5V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C1025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and comm

文件：103.68 Kbytes 页数：9 Pages

ALSC

5V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C1025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and comm

文件：103.68 Kbytes 页数：9 Pages

ALSC

5V 128K X 8 CMOS SRAM (Center power and ground)

Functional description The AS7C1025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired. Features • Industrial and comm

文件：103.68 Kbytes 页数：9 Pages

ALSC