AS7C1025B-10TJI中文资料ALSC数据手册PDF规格书

Functional description

The AS7C1025B is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 x 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired.

特性 Features

• Industrial and commercial temperatures

• Organization: 131,072 x 8 bits

• High speed

- 10/12/15/20 ns address access time

- 5/6/7/8 ns output enable access time

• Low power consumption: ACTIVE

- 605mW / max @ 10 ns

• Low power consumption: STANDBY

- 55 mW / max CMOS

• 6 T 0.18 u CMOS technology

• Easy memory expansion with CE, OE inputs

• Center power and ground

• TTL/LVTTL-compatible, three-state I/O

• JEDEC-standard packages

- 32-pin, 300 mil SOJ

- 32-pin, 400 mil SOJ

• ESD protection ≥ 2000 volts

• Latch-up current ≥ 200 mA