AS7C1025-12TJC中文资料ALSC数据手册PDF规格书

Functional description

The AS7C1025 and AS7C31025 are high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) devices organized as 131,072 words × 8 bits. They are designed for memory applications where fast data access, low power, and simple interfacing are desired.

Equal address access and cycle times (tAA, tRC, tWC) of 12/15/20 ns with output enable access times (tOE) of 6,7,8 ns are ideal for high-performance applications. The chip enable input CE permits easy memory and expansion with multiple-bank memory systems.

特性 Features

• AS7C1025 (5V version)

• AS7C31025 (3.3V version)

• Industrial and commercial temperatures

• Organization: 131,072 words × 8 bits

• High speed

- 12/15/20 ns address access time

- 6,7,8 ns output enable access time

• Low power consumption: ACTIVE

- 715 mW (AS7C1025) / max @ 12 ns (5V)

- 360 mW (AS7C31025) / max @ 12 ns (3.3V)

• Low power consumption: STANDBY

- 27.5 mW (AS7C1025) / max CMOS (5V)

- 1.8 mW (AS7C31025) / max CMOS (3.3V)

• 2.0V data retention

• Easy memory expansion with CE, OE inputs

• Center power and ground

• TTL/LVTTL-compatible, three-state I/O

• JEDEC-standard packages

- 32-pin, 300 mil SOJ

- 32-pin, 400 mil SOJ

- 32-pin TSOP II

• ESD protection ≥ 2000 volts

• Latch-up current ≥ 200 mA