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AS58C1001F-15SLASHXT中文资料AUSTIN数据手册PDF规格书

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厂商型号

AS58C1001F-15SLASHXT

功能描述

EEPROM

文件大小

259.19 Kbytes

页面数量

19

生产厂商

AUSTIN

网址

网址

数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-12-2 9:11:00

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AS58C1001F-15SLASHXT规格书详情

GENERAL DESCRIPTION

The Austin Semiconductor, Inc. AS58C1001 is a 1 Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131, 072 x 8 bits. The AS58C1001 is capable or in system electrical Byte and Page reprogrammability.

The AS58C1001 achieves high speed access, low power consumption, and a high level of reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology and CMOS process and circuitry technology.

FEATURES

• High speed: 150, 200, and 250ns

• Data Retention: 10 Years

• Low power dissipation, active current (20mW/MHz (TYP)), standby current (100µW(MAX))

• Single +5V (+10%) power supply

• Data Polling and Ready/Busy Signals

• Erase/Write Endurance (10,000 cycles in a page mode)

• Software Data protection Algorithm

• Data Protection Circuitry during power on/off

• Hardware Data Protection with RES pin

• Automatic Programming: Automatic Page Write: 10ms (MAX) 128 Byte page size

供应商 型号 品牌 批号 封装 库存 备注 价格
ESPRESS
2450+
QFN
9850
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24+
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66800
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ASI
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132
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ASI
22+
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12245
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ASI
2308+
CDIP
4862
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ESPRESS
23+
QFN
50000
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ESPRESS
23+
QFN
3000
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16+
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2500
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25+
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500000
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ESPRESS
24+
QFN
42000
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询价