AS4SD4M16DG-8/XT中文资料AUSTIN数据手册PDF规格书

厂商型号	AS4SD4M16DG-8/XT
功能描述	4 Meg x 16 SDRAM Synchronous DRAM Memory
文件大小	1.15056 Mbytes
页面数量	50 页
生产厂商	Austin Semiconductor
企业简称	AUSTIN
中文名称	Austin Semiconductor官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-22 20:00:00
人工找货	AS4SD4M16DG-8/XT价格和库存，欢迎联系客服免费人工找货

FEATURES

• Extended Testing Over -55°C to +125° C and

Industrial Temp -40°C to 85° C

• WRITE Recovery ( tWR/ tDPL) tWR = 2 CLK

• Fully synchronous; all signals registered on positive

edge of system clock

• Internal pipelined operation; column address can be

changed every clock cycle

• Internal banks for hiding row access/precharge

• Programmable burst lengths: 1, 2, 4, 8 or full page

• Auto Precharge and Auto Refresh Modes

• Self Refresh Mode (Industrial, -40°C to 85° C only)

• 4,096-cycle refresh

• LVTTL-compatible inputs and outputs

• Single +3.3V ±0.3V power supply

• Longer lead TSOP for improved reliability

(OCPL*)

• Short Flow / Long Flow Test Screening Options