5V 4M횞4 CMOS DRAM (Fast Page mode)

Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely

文件：274.56 Kbytes 页数：18 Pages

ALSC

5V 4M횞4 CMOS DRAM (Fast Page mode)

Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely

文件：274.56 Kbytes 页数：18 Pages

ALSC

5V 4M횞4 CMOS DRAM (Fast Page mode)

Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely

文件：274.56 Kbytes 页数：18 Pages

ALSC

5V 4M횞4 CMOS DRAM (Fast Page mode)

Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely

文件：274.56 Kbytes 页数：18 Pages

ALSC

5V 4M횞4 CMOS DRAM (Fast Page mode)

Functional description The AS4C4M4F0 and AS4C4M4F1 are high performance 16-megabit CMOS Dynamic Random Access Memory (DRAM) devices organized as 4,194,304 words × 4 bits. The devices are fabricated using advanced CMOS technology and innovative design techniques resulting in high speed, extremely

文件：274.56 Kbytes 页数：18 Pages

ALSC