1M-bit 횞 4 CMOS DRAM (Fast page mode or EDO)

Features • Organization: 1,048,576 words × 4 bits • High speed - 40/50/60/70 ns RAS access time - 20/25/30/35 ns column address access time - 10/13/15/18 ns CAS access time • Low power consumption - Active: 385 mW max (-60) - Standby: 5.5 mW max, CMOS I/O • Fast page mode (

文件：398.18 Kbytes 页数：16 Pages

ALSC

1M-bit 횞 4 CMOS DRAM (Fast page mode or EDO)

Features • Organization: 1,048,576 words × 4 bits • High speed - 40/50/60/70 ns RAS access time - 20/25/30/35 ns column address access time - 10/13/15/18 ns CAS access time • Low power consumption - Active: 385 mW max (-60) - Standby: 5.5 mW max, CMOS I/O • Fast page mode (

文件：398.18 Kbytes 页数：16 Pages

ALSC

1M-bit 횞 4 CMOS DRAM (Fast page mode or EDO)

Features • Organization: 1,048,576 words × 4 bits • High speed - 40/50/60/70 ns RAS access time - 20/25/30/35 ns column address access time - 10/13/15/18 ns CAS access time • Low power consumption - Active: 385 mW max (-60) - Standby: 5.5 mW max, CMOS I/O • Fast page mode (

文件：398.18 Kbytes 页数：16 Pages

ALSC

1M-bit 횞 4 CMOS DRAM (Fast page mode or EDO)

Features • Organization: 1,048,576 words × 4 bits • High speed - 40/50/60/70 ns RAS access time - 20/25/30/35 ns column address access time - 10/13/15/18 ns CAS access time • Low power consumption - Active: 385 mW max (-60) - Standby: 5.5 mW max, CMOS I/O • Fast page mode (

文件：398.18 Kbytes 页数：16 Pages

ALSC

1M-bit 횞 4 CMOS DRAM (Fast page mode or EDO)

Features • Organization: 1,048,576 words × 4 bits • High speed - 40/50/60/70 ns RAS access time - 20/25/30/35 ns column address access time - 10/13/15/18 ns CAS access time • Low power consumption - Active: 385 mW max (-60) - Standby: 5.5 mW max, CMOS I/O • Fast page mode (

文件：398.18 Kbytes 页数：16 Pages

ALSC

1M-bit 횞 4 CMOS DRAM (Fast page mode or EDO)

Features • Organization: 1,048,576 words × 4 bits • High speed - 40/50/60/70 ns RAS access time - 20/25/30/35 ns column address access time - 10/13/15/18 ns CAS access time • Low power consumption - Active: 385 mW max (-60) - Standby: 5.5 mW max, CMOS I/O • Fast page mode (

文件：398.18 Kbytes 页数：16 Pages

ALSC

1M-bit 횞 4 CMOS DRAM (Fast page mode or EDO)

Features • Organization: 1,048,576 words × 4 bits • High speed - 40/50/60/70 ns RAS access time - 20/25/30/35 ns column address access time - 10/13/15/18 ns CAS access time • Low power consumption - Active: 385 mW max (-60) - Standby: 5.5 mW max, CMOS I/O • Fast page mode (

文件：398.18 Kbytes 页数：16 Pages

ALSC

1M-bit 횞 4 CMOS DRAM (Fast page mode or EDO)

Features • Organization: 1,048,576 words × 4 bits • High speed - 40/50/60/70 ns RAS access time - 20/25/30/35 ns column address access time - 10/13/15/18 ns CAS access time • Low power consumption - Active: 385 mW max (-60) - Standby: 5.5 mW max, CMOS I/O • Fast page mode (

文件：398.18 Kbytes 页数：16 Pages

ALSC

1M-bit 횞 4 CMOS DRAM (Fast page mode or EDO)

Features • Organization: 1,048,576 words × 4 bits • High speed - 40/50/60/70 ns RAS access time - 20/25/30/35 ns column address access time - 10/13/15/18 ns CAS access time • Low power consumption - Active: 385 mW max (-60) - Standby: 5.5 mW max, CMOS I/O • Fast page mode (

文件：398.18 Kbytes 页数：16 Pages

ALSC

1M-bit ?4 CMOS DRAM fast page mode, single 5V power supply, 50ns

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