AS29F200T-70TC中文资料ALSC数据手册PDF规格书

FUNCTIONAL DESCRIPTION

The AS29F200 is a 2 megabit, 5 volt only Flash memory organized as 256K bytes of 8 bits each or 128K words of 16 bits each. For flexible erase and program capability, the 2 megabits of data is divided into 7 sectors: one 16K byte, two 8K byte, one 32K byte, and three 64K bytes. The ×8 data appears on DQ0–DQ7; the ×16 data appears on DQ0–DQ15. The AS29F200 is offered in JEDEC standard 44-pin SO and 48-pin TSOP packages. This device is designed to be programmed and erased in-system with a single 5.0V VCC supply. The device can also be reprogrammed in standard EPROM programmers.

Features

• Organization: 256K×8 or 128K×16

• Sector architecture

- One 16K; two 8K; one 32K; and three 64K byte sectors

- Boot code sector architecture—T (top) or B (bottom)

- Erase any combination of sectors or full chip

• Single 5.0±0.5V power supply for read/write operations

• Sector protection

• High speed 55/70/90/120 ns address access time

• Automated on-chip programming algorithm

- Automatically programs/verifies data at specified address

• Automated on-chip erase algorith

- Automatically preprograms/erases chip or specified sectors

• 10,000 write/erase cycle endurance

• Hardware RESET pin

- Resets internal state machine to read mode

• Low power consumption

- 20 mA typical read current

- 30 mA typical program current

- 300 µA typical standby current

- 1 µA typical standby current (RESET = 0)

• JEDEC standard software, packages and pinouts

- 48-pin TSOP

- 44-pin SO

• Detection of program/erase cycle completion

- DQ7 DATA polling

- DQ6 toggle bit

- RY/BY output

• Erase suspend/resume

- Supports reading data from a sector not being erased

• Low VCC write lock-out below 2.8V