ART2K0FE分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

ART2K0FE属于分立半导体产品的晶体管-FETMOSFET-射频。由安谱隆制造生产的ART2K0FE晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

General description

Based on Advanced Rugged Technology (ART), this 2000 W LDMOS RF power transistor

has been designed to cover a wide range of applications for ISM, broadcast and

communications. The unmatched transistor has a frequency range of 1 MHz to 400 MHz.

Features and benefits

 High breakdown voltage enables class E operation up to VDS = 53 V

 Qualified up to a maximum of VDS = 65 V

 Characterized from 30 V to 65 V to support a wide range of applications

 Integrated dual sided ESD protection enables class C operation and complete switch

off of the transistor

 Excellent ruggedness with no device degradation

 High efficiency

 Excellent thermal stability

 Designed for broadband operation

 For RoHS compliance see the product details on the Ampleon website

Applications

 Industrial, scientific and medical applications

 Plasma generators

 MRI systems

 CO2 lasers

 Particle accelerators

 Broadcast

 FM radio

 VHF TV

 Communications

 Non cellular communications

 UHF radar