Discrete devices_IGBT

INSULATED GATE BIPOLAR TRANSISTOR

ARTSCHIP

Power LDMOS transistor

Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor hasbeen designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz. • High breakdown voltage enables class E operation up to VDS = 50 V\n• Qualified up to a maximum of VDS = 65 V\n• Characterized from 30 V to 65 V to support a wide range of applications\n• Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor\n• Exc;

Ampleon

安谱隆

Power LDMOS transistor

Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 650 MHz • High breakdown voltage enables class E operation up to VDS = 53 V\n• Qualified up to a maximum of VDS = 65 V\n• Characterized from 30 V to 65 V to support a wide range of applications\n• Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor\n• Exc;

Ampleon

安谱隆

Package：SOT-539AN；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：ART1K6FHG/SOT1248/REELDP

Ampleon USA Inc.

Package：SOT-539BN；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：ART1K6FHS/SOT539/TRAY

Ampleon USA Inc.

Package：SOT-539A；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：ART1K6FH/SOT539/TRAY

Ampleon USA Inc.