AQY410SX数据手册继电器的固态继电器规格书PDF

描述 Description

FEATURES
1. 60V type couples high capacity (0.5A) with low on-resistance (1Ω).
\u00012. SO package 4-pin type in super miniature design
The device comes in a super-miniature SO package 4-pin type measuring (W) 4.3×(L) 4.4×(H) 2.1 mm (W) .169×(L .173×(H) .083 inch —approx. 70% of the volume and 70% of the footprint size of
2. Normally closed type (1 Form B) is low on-resistance. (All AQ❍4 PhotoMOS are Form B types. And also the Form A types have a low on-resistance.)
This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method.
3. Tape and reel
The device comes standard in a tape and reel (1,000 pcs./reel) to facilitate automatic insertion machines.
4. Controls low-level analog signals
PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion.
5. Low-level off-state leakage current
In contrast to the SSR with an off-state leakage current of several milliamperes, the PhotoMOS relay features a very small off state leakage current of 1nA even with the rated load voltage of 400 V (AQY414S).

特性 Features

1. 60V type couples high capacity (0.5A) with low on-resistance (1Ω).
\u00012. SO package 4-pin type in super miniature design
The device comes in a super-miniature SO package 4-pin type measuring (W) 4.3×(L) 4.4×(H) 2.1 mm (W) .169×(L .173×(H) .083 inch —approx. 70% of the volume and 70% of the footprint size of
2. Normally closed type (1 Form B) is low on-resistance. (All AQ❍4 PhotoMOS are Form B types. And also the Form A types have a low on-resistance.)
This has been realized thanks to the built-in MOSFET processed by our proprietary method, DSD (Double diffused and Selective Doping) method.
3. Tape and reel
The device comes standard in a tape and reel (1,000 pcs./reel) to facilitate automatic insertion machines.
4. Controls low-level analog signals
PhotoMOS relays feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion.
5. Low-level off-state leakage current
In contrast to the SSR with an off-state leakage current of several milliamperes, the PhotoMOS relay features a very small off state leakage current of 1nA even with the rated load voltage of 400 V (AQY414S).