AQY221N2SX中文资料PhotoMOS RF SOP 1a C×R10 (4脚型)数据手册Panasonic规格书

描述 Description

RF (Radio Frequency) C × R 10 Type
                              (by)FEATURES
1. In addition to lower output capacitance between terminals than ever before, the PhotoMOS relay achieves low ON-resistance.
  Output capacitance(C): 1.0pF (typ.)
  ON resistance(R): 9.5Ω (typ.)
2. High speed switching
  Turn on time: 30µs
  Turn off time: 30µs
3. SO package 4-pin type in super miniature design
4. Low-level off state leakage current
The SSR has an off state leakage current of several milliamperes, where as this PhotoMOS relay has only 10pA (typical) even with the rated load voltage
5. Controls low-level analog signals
6. Low thermal electromotive force (Approx. 1 µV)TYPICAL APPLICATIONS
Measuring and testing equipment
1. Testing equipment for semiconductor performance
    IC tester, Liquid crystal driver tester,  semiconductor performance tester
2. Board tester
    Bear board tester, In-circuit tester,  function tester
3. Medical equipment
    Ultrasonic wave diagnostic machine
4. Multi-point recorder
    Warping, thermo couple

特性 Features

1. In addition to lower output capacitance between terminals than ever before, the PhotoMOS relay achieves low ON-resistance.
  Output capacitance(C): 1.0pF (typ.)
  ON resistance(R): 9.5Ω (typ.)
2. High speed switching
  Turn on time: 30µs
  Turn off time: 30µs
3. SO package 4-pin type in super miniature design
4. Low-level off state leakage current
The SSR has an off state leakage current of several milliamperes, where as this PhotoMOS relay has only 10pA (typical) even with the rated load voltage
5. Controls low-level analog signals
6. Low thermal electromotive force (Approx. 1 µV)TYPICAL