AQW614中文资料PhotoMOS GU 1a1b数据手册Panasonic规格书

描述 Description

GU PhotoMOS (AQW614)FEATURES
1. Approx. 1/2 the space compared with the mounting of a set of 1 Form A and 1 Form B photoMOS relays
2. Applicable for 1 Form A 1 Form B use as well as two independent 1 Form A and 1 Form B use
3. Low thermal electromotive force (Approx. 1 µV)
4. Eliminates the need for a counter electromotive force protection diode in the drive circuits on the input side
5. Controls load currents up to 0.13 A with an input current of 5 mA with load voltage of 400 V
6. High speed switching: operate time of 300 µs typical.
7. Eliminates the need for a power supply to drive the power MOSFET
8. Extremely low closed-circuit offset voltages to enable control of small analog signals without distortion (Typical 100 pA at 400 V)
9. Stable on resistanceTYPICAL APPLICATIONS
• High-speed inspection machines
• Telephone equipment
• Computer

特性 Features

1. Approx. 1/2 the space compared with the mounting of a set of 1 Form A and 1 Form B photoMOS relays
2. Applicable for 1 Form A 1 Form B use as well as two independent 1 Form A and 1 Form B use
3. Low thermal electromotive force (Approx. 1 µV)
4. Eliminates the need for a counter electromotive force protection diode in the drive circuits on the input side
5. Controls load currents up to 0.13 A with an input current of 5 mA with load voltage of 400 V
6. High speed switching: operate time of 300 µs typical.
7. Eliminates the need for a power supply to drive the power MOSFET
8. Extremely low closed-circuit offset voltages to enable control of small analog signals without distortion (Typical 100 pA at 400 V)
9. Stable on resistanceTYPICAL

应用 Application

• High-speed inspection machines
• Telephone equipment
• Computer