AQV225AZ数据手册继电器的固态继电器规格书PDF

描述 Description

PhotoMOS RF 1 Form A DIP6-pin type suited for radio frequent switchingFEATURES
1. High frequency characteristics with low capacitance between output terminals
   Low output capacitance: typ. 4.8 pF
   Isolation loss: 40 dB or more (at 1 MHz)(AQV225)
2. High speed switching
   Turn on time: typ. 0.1 ms
   Turn off time: typ. 0.03 ms
3. Low-level off state leakage current of typ. 0.03 nA
4. Controls low-level analog signals
   PhotoMOS features extremely low closed-circuit offset voltages to enable control of small analog signals without distortion.TYPICAL APPLICATIONS
1. Measuring instruments
    Scanner, IC checker, Board tester, etc.
2. Audio visual equipment
   CD, VCR
3. Security equipment

特性 Features

1. High frequency characteristics with low capacitance between output terminals
   Low output capacitance: typ. 4.8 pF
   Isolation loss: 40 dB or more (at 1 MHz)(AQV225)
2. High speed switching
   Turn on time: typ. 0.1 ms
   Turn off time: typ. 0.03 ms
3. Low-level off state leakage current of typ. 0.03 nA
4. Controls low-level analog signals
   PhotoMOS features extremely low closed-circuit offset voltages to enable control of small analog signals without distortion.TYPICAL