APTGL475DA120D3G数据手册分立半导体产品的晶体管-IGBT-模块规格书PDF

描述 Description

IGBT 4 Very Low voltage dropLow tail currentLow leakage currentKelvin emitter for easy driveLow stray inductanceHigh level of integrationStable temperature behaviorVery ruggedDirect mounting to heatsink (isolated package)Low junction to case thermal resistanceInternal thermistor for temperature monitoring (optional)Easy paralleling due to positive TC of VCEsatLow profileRoHS Compliant

特性 Features

• Configuration: Boost chopper
• VCES (V): 1200
• VCESat (V): 1.85
• Current (A) Tc=80C: 475
• Silicon type: TRENCH 4 IGBT
• Package: D3

简介

APTGL475DA120D3G属于分立半导体产品的晶体管-IGBT-模块。由制造生产的APTGL475DA120D3G晶体管 - IGBT - 模块绝缘栅双极晶体管 (IGBT) 是三端功率半导体器件，主要用作电子开关，兼具高效率和快速切换优点。作为模块，IGBT 配置为非对称式桥； 升压、降压和制动斩波器；全桥、三电平和三相逆变器。有些器件内置了用于监控温度的 NTC 热敏电阻。IGBT 模块可根据最大功率、集电极电流、集射击穿电压和配置进行区分。