isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 40A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

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ISC

无锡固电

Power Semiconductors Power Modules

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Microsemi

美高森美

MOSFET

ROHS

Microchip

微芯科技

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

文件：69.45 Kbytes 页数：4 Pages

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

文件：64.8 Kbytes 页数：4 Pages

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

文件：69.45 Kbytes 页数：4 Pages

ADPOW