isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

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ISC

无锡固电

Power MOS 7 is a new generation of low loss, high voltage, N-Channel

文件：94.39 Kbytes 页数：5 Pages

Microsemi

美高森美

POWER MOS 7 MOSFET

文件：95.2 Kbytes 页数：5 Pages

ADPOW

Power MOS 7 is a new generation of low loss, high voltage, N-Channel

文件：94.39 Kbytes 页数：5 Pages

Microsemi

美高森美

N-Channel MOSFET

ROHS

Microchip

微芯科技