40V N-Channel Enhancement Mode MOSFET

Features - VDS =40V ID =6A - RDS(ON)

文件：1.1013 Mbytes 页数：7 Pages

APME

永源微电子

MOSFET – Power, Dual N-Channel, SOIC-8 40 V, 5.8 A

Features • Designed for use in low voltage, high speed switching applications • Ultra Low On−Resistance Provides Higher Efficiency and Extends Battery Life − RDS(on) = 0.027 , VGS = 10 V (Typ) − RDS(on) = 0.034 , VGS = 4.5 V (Typ) • Miniature SOIC−8 Surface Mount Package Saves Board Spac

文件：219.31 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

High Speed Switch Applications

文件：615.79 Kbytes 页数：5 Pages

TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

High Speed Switch Applications • With built-in gate-source resistor: RGS = 1 MΩ (typ.) • 2.5 V gate drive • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package

文件：175.23 Kbytes 页数：5 Pages

TOSHIBA

东芝