Dual N-Channel MOSFET uses advanced trench technology

文件：649.26 Kbytes 页数：5 Pages

DOINGTER

杜因特

Lower Gate Charge, Simple Drive Requirement

文件：99.28 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

Simple Drive Requirement

文件：99.28 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

N-Channel Enhancement Mode MOSFET

Features • 25V/13.5A, RDS(ON)=6mΩ(typ.) @ VGS=10V RDS(ON)=7.5mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design • Avalanche Rated • Reliable and Rugged • SOP-8 Package • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment

文件：126.89 Kbytes 页数：11 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 25V/13.5A, RDS(ON)=6mΩ(typ.) @ VGS=10V RDS(ON)=7.5mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design • Avalanche Rated • Reliable and Rugged • SOP-8 Package • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment

文件：126.89 Kbytes 页数：11 Pages

ANPEC

茂达电子

N-Channel Enhancement Mode MOSFET

Features • 25V/13.5A, RDS(ON)=6mΩ(typ.) @ VGS=10V RDS(ON)=7.5mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design • Avalanche Rated • Reliable and Rugged • SOP-8 Package • Lead Free Available (RoHS Compliant) Applications • Power Management in Notebook Computer, Portable Equipment

文件：126.89 Kbytes 页数：11 Pages

ANPEC

茂达电子