-30V P-Channel Enhancement Mode MOSFET

AP3401AI采用先进的沟道技术，提供出色的RDS（ON），低栅极电荷和栅极电压低至-1.0V的操作。该器件适用于负载开关或PWM应用。 一般特性高功率，和电流处理能力，无铅产品SOT23小体积封装 VDS = -30V，ID = -4.0A \nRDS（ON）<50m\nΩ@ V GS = -4.5V RDS（ON）<60m\nΩ@ V GS = -2.5V 高功率和电流处理能力\n无铅产品\nSOT23小体积封装;

APM

永源微

Plastic-Encapsulate MOSFETS

FEATURE High dense cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability APPLICATION Load/Power Switching Interfacing Switching

文件：845.59 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

Plastic-Encapsulate MOSFETS

Features VDS (V) = -30V ID = -4.2 A (VGS = -10V) RDS(ON)

文件：843.06 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

Plastic-Encapsulate MOSFETS

FEATURE High dense cell design for extremely low RDS(ON) Exceptional on-resistance and maximum APPLICATION Load Switch for Portable Devices DC/DC Converter DC current capability

文件：414.9 Kbytes 页数：4 Pages

GWSEMI

唯圣电子