丝印：AP240N03NF；Package：PDFN5x6-8L；30V N-Channel Enhancement Mode MOSFET

Description The AP240N03NF uses advanced APM-SGT V technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =240A RDS

文件：957.41 Kbytes 页数：7 Pages

APME

永源微电子

30V N-Channel Enhancement Mode MOSFET

APM

永源微

30V N-Channel Power MOSFET

文件：416.3 Kbytes 页数：5 Pages

TSC

台湾半导体

30V N-Channel Power MOSFET

文件：416.3 Kbytes 页数：5 Pages

TSC

台湾半导体