N-Channel Mosfet

AP1N60H采用先进的沟道技术，提供出色的RDS（ON），低栅极电荷和栅极电压低至3.0V的操作。该器件适用于负载开关或PWM应用。 VDS = 600V，ID = 1A \nRDS（ON）<7.0mΩ\n@ V GS =10V RDS（ON）<8.0mΩ\n@ V GS = 4.5V 高功率和电流处理能力\n无铅产品\nTO-92直插封装;

APM

永源微

650V N-Channel Enhancement Mode MOSFET

Features - VDS = 650V ID =1.0A - RDS(ON)

文件：759.09 Kbytes 页数：7 Pages

APME

永源微电子

600V N-Channel Enhancement Mode MOSFET

APM

永源微

TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM

TMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced TMOS E

文件：266.59 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand hi

文件：232.59 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance. Intended for use in Compact Fluorescent Lights

文件：30.34 Kbytes 页数：5 Pages

PHI

PHI