P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The 2021-8 J-lead package provides good on-resistance performance and space saving like SC-70-6. ▼ Capable of 2.5V gat

文件：70.07 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

N-Channel Enhancement MOSFET

Application o Load switch « High Frequency Switching and Synchronous Rectification o Active Clamp in Intermediate « DCIDC Power Supplies

文件：2.63065 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：AP18G02DF；Package：PDFN3X3-8L；20V NP-Channel Enhancement Mode MOSFET

Features - VDS = 20V ID =18A - RDS(ON)

文件：1.773 Mbytes 页数：10 Pages

APME

永源微电子

丝印：AP18G03DF；Package：PDFN3X3-8L；30V NP-Channel Enhancement Mode MOSFET

Features - VDS = 30V ID =18.8A - RDS(ON)

文件：1.10987 Mbytes 页数：10 Pages

APME

永源微电子

丝印：AP18G04GD；Package：TO-252-4L；40V NP-Channel Enhancement Mode MOSFET

Features - VDS = 40V ID =18.8A - RDS(ON)

文件：1.16107 Mbytes 页数：10 Pages

APME

永源微电子

丝印：AP18H06S；Package：SOP-8L；60V N-Channel Enhancement Mode MOSFET

Features - VDS = 60V ID =18A - RDS(ON)

文件：794.25 Kbytes 页数：7 Pages

APME

永源微电子

丝印：AP18N03D；Package：TO-252-3L；30V N-Channel Enhancement Mode MOSFET

Features - VDS = 30V ID =18A - RDS(ON)

文件：1.46972 Mbytes 页数：7 Pages

APME

永源微电子

丝印：AP18N03LI；Package：SOT23-6L；30V N-Channel Enhancement Mode MOSFET

Features - VDS=30V ID =18A - RDS(ON)

文件：1.40542 Mbytes 页数：7 Pages

APME

永源微电子

30V N-Channel Enhancement Mode MOSFET

Features - VDS = 30V ID =18.3A - RDS(ON)

文件：1.55316 Mbytes 页数：7 Pages

APME

永源微电子

60V N-Channel Enhancement Mode MOSFET

Features - VDS = 60V ID =18A - RDS(ON)

文件：814.46 Kbytes 页数：7 Pages

APME

永源微电子