N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications.

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A-POWER

富鼎先进电子

Simple Drive Requirement

文件：64.019 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description\nAdvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.\nThe TO-220CFM isolation package is widely preferred for\ncommercial-industrial through hole applications.▼Simple Drive

APEC

富鼎先进

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is widely preferred for commercial-industrial through-hole applications. ▼Simple Drive Re

文件：63.81 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

Simple Drive Requirement Lower Gate Charge

Description AP09N20B series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-263

文件：56.58 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

N-CHANNEL ENHANCEMENT MODE

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial industrial applications at power dissipation l

文件：78.93 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子