AOD4187

P-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAOD4187usesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.WiththeexcellentthermalresistanceoftheDPAKpackage,thisdeviceiswellsuitedforhighcurrentloadapplications Features VDS(V)=-40V ID=-45A(VGS=-1

AOD4187

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=-45A@TC=25℃ ·DrainSourceVoltage :VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=17mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

AOD4187

P-Channel Enhancement Mode Field Effect Transistor;   VDS (V) = -40V\n  ID = -45A (VGS = -10V)\n  RDS(ON) < 17mΩ (VGS = -10V)\n  RDS(ON) < 23mΩ (VGS = -4.5V)\n  100% UIS Tested!\n  100% Rg Tested! ;

General Description\nThe AOD4187 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications

AOI4187

P-Channel40V(D-S)MOSFET

AOI4187

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=-55A@TC=25℃ ·DrainSourceVoltage :VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=10mΩ(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

BX4187L

BROADBANDxDSL,HPN,CMCs

BROADBANDACCESS:xDSL,HPN,CMCs Broadbandhascomealongwayinthepastfewyears.Pulsecontinuestoleadthewaywithabroadrangeofcomponentsthatenabletwisted-paircopper,fiberandcoaxialcabletodeliverhigh-speedservicestohomesandbusinesses.Pulsecomponentsarealsous