AO4614A

Complementary Enhancement Mode Field Effect Transistor

GeneralDescription TheAO4614AusesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedinH-bridge,Invertersandotherapplications.StandardProductAO4614AisPb-free(meetsROHS&Sony259specifications). Features

AO4614A

Package：SOP-8；Complementary Trench MOSFET

■Features ●N-Channel: VDS(V)=40V ID=6A(VGS=10V) RDS(ON)

AO4614A

N- and P-Channel 30 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •MotorDrive •MobilePowerBank

AO4614A

MOSFET：Complementary;

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very efficient manufacturing model. Our product portfolio covers 6V to 1000V MOSFETs and 600V, 650V, 1200V, and 1350V IGBTs.

AO4614A

40V N+P MOSFET;

AO4614A

MOSFET;

MTW

AO4614A-HF

Package：SOP-8；Complementary Trench MOSFET

■Features ●N-Channel: VDS(V)=40V ID=6A(VGS=10V) RDS(ON)