AO4422

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO4422usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.ThesourceleadsareseparatedtoallowaKelvinconnectiontothesource,whichmaybeusedtobypassthesour

AO4422

N-Channel 20V (D-S) MOSFET

FEATURES •Halogen-free •TrenchFET®PowerMOSFET •OptimizedforHigh-SideSynchronous RectifierOperation •100RgTested •100UISTested APPLICATIONS •NotebookCPUCore -High-SideSwitch

AO4422

N-Channel Enhancement Mode Field Effect Transistor;

AO4422A

N-Channel Enhancement Mode Field Effect Transistor;   VDS (V) = 30V\n  ID = 11A (VGS = 10V)\n  RDS(ON) < 15mΩ (VGS = 10V)\n  RDS(ON) < 24mΩ (VGS = 4.5V);

General Description\nThe AO4422A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AO4422A is Pb-free (meets ROHS & Sony 259 specifications). AO4422AL is a Green Product ordering option. AO4422A and AO4422AL are electrically identical.

AO4422A

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO4422AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.ThesourceleadsareseparatedtoallowaKelvinconnectiontothesource,whichmaybeusedtobypassthesou

AO4422AL

N-Channel Enhancement Mode Field Effect Transistor

GeneralDescription TheAO4422AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.ThesourceleadsareseparatedtoallowaKelvinconnectiontothesource,whichmaybeusedtobypassthesou