PULSE-WIDTH-MODULATION CONTROL CIRCUITS

文件：449.73 Kbytes 页数：17 Pages

TI

德州仪器

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD494 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product AOD494 is Pb-free (meets ROHS & Sony 259 specifications). AOD494L is a

文件：385.52 Kbytes 页数：5 Pages

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 55A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 11mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：318.38 Kbytes 页数：2 Pages

ISC

无锡固电

VOLTAGE MODE PWM CONTROLLER

[Analog Technology, Inc.]

文件：175.17 Kbytes 页数：8 Pages

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