AM8958M8VR说明书PDF资料行情报价创瑞科技-114ic电子网

首页 >AM8958M8VR>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
AM8958M8VR	文件：536.26 Kbytes Page：10 Pages	NP PAIR ENHANCEMENT MODE DESCRIPTION The AM8958 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly 文件：536.26 Kbytes 页数：10 Pages	AITSEMI 创瑞科技	AITSEMI
AM8958M8R	文件：536.26 Kbytes Page：10 Pages	NP PAIR ENHANCEMENT MODE DESCRIPTION The AM8958 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly 文件：536.26 Kbytes 页数：10 Pages	AITSEMI 创瑞科技	AITSEMI
AMA3B1KK-KBR-B0	文件：0 bytes Page：0 Pages	BGA	AMBIQ 上传：深圳市球芯贸易有限公司	AMBIQ
AMA3B1KK-KBR-B0	文件：0 bytes Page：0 Pages	BGA	APPOLLO 上传：深圳市芯巴巴科技有限公司	APPOLLO
AMAPH1KK-KCR	文件：0 bytes Page：0 Pages	49WLCSP	AMBIQ 上传：深圳德田科技有限公司	AMBIQ

更多AM8958M8VR供应商更新时间2026-1-22 22:58:00