N-Channel 600-V (D-S) MOSFET

文件：305.53 Kbytes 页数：5 Pages

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Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

文件：124.46 Kbytes 页数：6 Pages

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Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications

文件：120.94 Kbytes 页数：5 Pages

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Insulated Gate Bipolar Transistor with Anti-Parallel Diode

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文件：146.13 Kbytes 页数：6 Pages

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