30V DUAL N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM4920 is the Dual N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous

文件：652.1 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

30V DUAL N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM4920 is the Dual N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous

文件：652.1 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

30V DUAL N-CHANNEL ENHANCEMENT MODE

DESCRIPTION The AM4920 is the Dual N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This device is suitable for use as a load switch or in PWM and gate charge for most of the synchronous

文件：652.1 Kbytes 页数：8 Pages

AITSEMI

创瑞科技

Dual N-Channel 30-V (D-S) MOSFET

文件：197.13 Kbytes 页数：6 Pages

ANALOGPOWER

Dual N-Channel MOSFET uses advanced trench technology

文件：1.63105 Mbytes 页数：4 Pages

DOINGTER

杜因特

Dual N-Channel 30-V (D-S) MOSFET

文件：1.025849 Mbytes 页数：9 Pages

VBSEMI

微碧半导体