N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DESCRIPTION The AM4102 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. AM4102 is available in a TO252-2 package. FEATURES  VDS=30V, ID=50A RDS(ON)

文件：752 Kbytes 页数：9 Pages

AITSEMI

创瑞科技

Introducing the low-power concept in automotive applications using the STM8AL board of the STM8A-DISCOVERY

文件：174.36 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4102/AOI4102 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Product Summary VDS 30V I

文件：151.96 Kbytes 页数：5 Pages

AOSMD

万国半导体

30V N-Channel MOSFET

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AOSMD

万国半导体