AM29LV800BB70REIB中文资料超威半导体数据手册PDF规格书

GENERAL DESCRIPTION

The Am29LV800B is an 8 Mbit, 3.0 volt-only Flash memory organized as 1,048,576 bytes or 524,288 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device requires only a single, 3.0 volt VCC supply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device.

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

— Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

— Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors

■ Manufactured on 0.35 µm process technology

— Compatible with 0.5 µm Am29LV800 device

■ High performance

— Full voltage range: access times as fast as 80 ns

— Regulated voltage range: access times as fast as 70 ns

■ Ultra low power consumption (typical values at 5 MHz)

— 200 nA Automatic Sleep mode current

— 200 nA standby mode current

— 7 mA read current

— 15 mA program/erase current

■ Flexible sector architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and fifteen 64 Kbyte sectors (byte mode)

— One 8 Kword, two 4 Kword, one 16 Kword, and fifteen 32 Kword sectors (word mode)

— Supports full chip erase

— Sector Protection features:

A hardware method of locking a sector to prevent any program or erase operations within that sector

Sectors can be locked in-system or via programming equipment

Temporary Sector Unprotect feature allows code changes in previously locked sectors

■ Unlock Bypass Program Command

— Reduces overall programming time when issuing multiple program command sequences

■ Top or bottom boot block configurations available

■ Embedded Algorithms

— Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors

— Embedded Program algorithm automatically writes and verifies data at specified addresses

■ Minimum 1,000,000 write cycle guarantee per sector

■ Package option

— 48-ball FBGA

— 48-pin TSOP

— 44-pin SO

■ Compatibility with JEDEC standards

— Pinout and software compatible with singlepower supply Flash

— Superior inadvertent write protection

■ Data# Polling and toggle bits

— Provides a software method of detecting program or erase operation completion

■ Ready/Busy# pin (RY/BY#)

— Provides a hardware method of detecting program or erase cycle completion

■ Erase Suspend/Erase Resume

— Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation

■ Hardware reset pin (RESET#)

— Hardware method to reset the device to reading array data