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AM29LV6402ML110RPHI中文资料超威半导体数据手册PDF规格书

AM29LV6402ML110RPHI
厂商型号

AM29LV6402ML110RPHI

功能描述

128 Megabit (4 M x 32-Bit/8 M x 16-Bit) MirrorBit??3.0 Volt-only Uniform Sector Flash Memory with Versatile I/O??Control

文件大小

932.51 Kbytes

页面数量

57

生产厂商 Advanced Micro Devices
企业简称

AMD超威半导体

中文名称

美国超威半导体公司官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-5-26 9:03:00

人工找货

AM29LV6402ML110RPHI价格和库存,欢迎联系客服免费人工找货

AM29LV6402ML110RPHI规格书详情

GENERAL DESCRIPTION

The Am29LV6402M consists of two 64 Mbit, 3.0 volt single power supply flash memory devices and is organized as 4,194,304 doublewords or 8,388,608 words. The device has a 32-bit wide data bus that can also function as an 16-bit wide data bus by using the WORD# input. The device can be programmed either in the host system or in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS

ARCHITECTURAL ADVANTAGES

■ Single power supply operation

— 3 volt read, erase, and program operations

■ VersatileI/OTM control

— Device generates data output voltages and tolerates data input voltages on the CE# and DQ inputs/outputs as determined by the voltage on the VIO pin; operates from 1.65 to 3.6 V

■ Manufactured on 0.23 µm MirrorBitTM process technology

■ SecSi™ (Secured Silicon) Sector region

— 128-doubleword/256-word sector for permanent, secure identification through an 8-doubleword/16-word random Electronic Serial Number, accessible through a command sequence

— May be programmed and locked at the factory or by the customer

■ Flexible sector architecture

— One hundred twenty-eight 32 Kdoubleword (64 Kword) sectors

■ Compatibility with JEDEC standards

— Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection

■ 100,000 erase cycles per sector

■ 20-year data retention at 125°C

PERFORMANCE CHARACTERISTICS

■ High performance

— 100 ns access time

— 30 ns page read times

— 0.5 s typical sector erase time

— 22 µs typical write buffer doubleword programming time: 16-doubleword/32-word write buffer reduces overall programming time for multiple-word updates

— 4-doubleword/8-word page read buffer

— 16-doubleword/32-word write buffer

■ Low power consumption (typical values at 3.0 V, 5 MHz)

— 26 mA typical active read current

— 100 mA typical erase/program current

— 2 µA typical standby mode current

■ Package options

— 80-ball Fortified BGA

SOFTWARE & HARDWARE FEATURES

■ Software features

— Program Suspend & Resume: read other sectors before programming operation is completed

— Erase Suspend & Resume: read/program other sectors before an erase operation is completed

— Data# polling & toggle bits provide status

— Unlock Bypass Program command reduces overall multiple-word or byte programming time

— CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices

■ Hardware features

— Sector Group Protection: hardware-level method of preventing write operations within a sector group

— Temporary Sector Unprotect: VID-level method of changing code in locked sectors

— WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings

— Hardware reset input (RESET#) resets device

— Ready/Busy# output (RY/BY#) detects program or erase cycle completion

供应商 型号 品牌 批号 封装 库存 备注 价格
AMD
24+
66
原装现货假一赔十
询价
AMD
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
AMD
23+
19
6500
专注配单,只做原装进口现货
询价
AMD
23+
19
6500
专注配单,只做原装进口现货
询价