AM29F100T-120EE中文资料超威半导体数据手册PDF规格书

GENERAL DESCRIPTION

The Am29F100 is a 1 Mbit, 5.0 Volt-only Flash memory organized as 131,072 bytes or 65,536 words. The Am29F100 is offered in 44-pin SO and 48-pin TSOP packages. Word-wide data appears on DQ0-DQ15; byte-wide data on DQ0-DQ7. The device is designed to be programmed in-system with the standard system 5.0 Volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed or erased in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS

■ Single power supply operation

— 5.0 V ± 10 for read, erase, and program operations

— Simplifies system-level power requirements

■ High performance

— 70 ns maximum access time

■ Low power consumption

— 20 mA typical active read current for byte mode

— 28 mA typical active read current for word mode

— 30 mA typical program/erase current

— 25 µA typical standby current

■ Flexible sector architecture

— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and

one 64 Kbyte sectors (byte mode)

— One 8 Kword, two 4 Kword, one 16 Kword, and

one 32 Kword sectors (word mode)

— Any combination of sectors can be erased

— Supports full chip erase

■ Top or bottom boot block configurations available

■ Sector protection

— Hardware-based feature that disables/re-enables

program and erase operations in any

combination of sectors

— Sector protection/unprotection can be

implemented using standard PROM

programming equipment

— Temporary Sector Unprotect feature allows in

system code changes in protected sectors

■ Embedded Algorithms

— Embedded Erase algorithm automatically

pre-programs and erases the chip or any

combination of designated sector

— Embedded Program algorithm automatically

programs and verifies data at specified address

■ Minimum 100,000 program/erase cycles guaranteed

■ 20-year data retention at 125°C

— Reliable operation for the life of the system

■ Package options

— 44-pin SO

— 48-pin TSOP (Continue ...)