BQ2969

BQ2969OvervoltageProtectionfor2-Series,3-Series,and4-SeriesCellLi-IonBatterieswithRegulatedOutputSupply

1Features •2-series,3-series,and4-series cellovervoltageprotection(OVP) •FactoryprogrammedOVPthreshold(3.6Vto5.2V) with±12mVaccuracy •FixeddelaytimertotriggerFETdriveoutput (0.25sto6.5soptions) •Outputpinoptions: –Activehigh –Open-drain-activepulldown

BQ2969T

BQ2969TOvervoltageandOvertemperatureProtectionfor2-Series,3-Series,and4-SeriesCellLi-IonBatterieswithLDOOutputandControl/PTCInput

1Features •2-series,3-series,and4-seriescellovervoltage protection(OVP) •FactoryprogrammedOVPthreshold(3.6Vto5.2V) with±12mVaccuracy •FixeddelaytimertotriggerFETdriveoutput (0.25sto6.5soptions) •Controlinputpin,whichcanimplementcell overtemperatureprotec

BQ2969XY

BQ2969OvervoltageProtectionfor2-Series,3-Series,and4-SeriesCellLi-IonBatterieswithRegulatedOutputSupply

1Features •2-series,3-series,and4-series cellovervoltageprotection(OVP) •FactoryprogrammedOVPthreshold(3.6Vto5.2V) with±12mVaccuracy •FixeddelaytimertotriggerFETdriveoutput (0.25sto6.5soptions) •Outputpinoptions: –Activehigh –Open-drain-activepulldown

BQ2969XYT

BQ2969TOvervoltageandOvertemperatureProtectionfor2-Series,3-Series,and4-SeriesCellLi-IonBatterieswithLDOOutputandControl/PTCInput

1Features •2-series,3-series,and4-seriescellovervoltage protection(OVP) •FactoryprogrammedOVPthreshold(3.6Vto5.2V) with±12mVaccuracy •FixeddelaytimertotriggerFETdriveoutput (0.25sto6.5soptions) •Controlinputpin,whichcanimplementcell overtemperatureprotec

FN2969

CMOSProgrammablePeripheralInterface

Description TheIntersil82C55AisahighperformanceCMOSversionoftheindustrystandard8255Aandismanufacturedusingaself-alignedsilicongateCMOSprocess(ScaledSAJIIV).ItisageneralpurposeprogrammableI/Odevicewhichmaybeusedwithmanydifferentmicroprocessors.Thereare2

NB2969A

LowPower,ReducedEMIClockSynthesizer

NTE2969

MOSFETN-Channel,EnhancementModeHighSpeedSwitch

Features: ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent ●LowStaticDrain–SourceOn–StateResistance

RN2969

TOSHIBATransistorSiliconPNPEpitaxialType(PCTProcess)

Switching,InverterCircuit,InterfaceCircuit AndDriverCircuitApplications •IncludingtwodevicesinUS6(ultrasuperminitypewith6leads) •Withbuilt-inbiasresistors •Simplifycircuitdesign •Reduceaquantityofpartsandmanufacturingprocess •ComplementarytoRN1967~RN1969

RN2969CT

Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications

Switching,InverterCircuit,InterfaceCircuitand DriverCircuitApplications •TwodevicesareincorporatedintoafinepitchSmallMold(6pin) package. •Incorporatingabiasresistorintoatransistorreducespartscount. Reducingthepartscountenablethemanufactureofevermore

RN2969FE

Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications

Switching,InverterCircuit,InterfaceCircuitand DriverCircuitApplications •TwodevicesareincorporatedintoanExtreme-Super-Mini(6-pin) package. •Incorporatingabiasresistorintoatransistorreducespartscount. Reducingthepartscountenablesthemanufactureofevermore