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AM28F512A-120JEB中文资料超威半导体数据手册PDF规格书

AM28F512A-120JEB
厂商型号

AM28F512A-120JEB

功能描述

512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms

文件大小

463.73 Kbytes

页面数量

34

生产厂商 Advanced Micro Devices
企业简称

AMD超威半导体

中文名称

美国超威半导体公司官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2024-10-31 18:04:00

AM28F512A-120JEB规格书详情

GENERAL DESCRIPTION

The Am28F512A is a 512 Kbit Flash memory organized as 64 Kbytes of 8 bits each. AMD’s Flash memories offer the most cost-effective and reliable read/write non- volatile random access memory. The Am28F512A is packaged in 32-pin PDIP, PLCC, and TSOP versions. It is designed to be reprogrammed and erased in-system or in standard EPROM programmers. The Am28F512A is erased when shipped from the factory.

DISTINCTIVE CHARACTERISTICS

■ High performance

— 70 ns maximum access time

■ CMOS low power consumption

— 30 mA maximum active current

— 100 µA maximum standby current

— No data retention power consumption

■ Compatible with JEDEC-standard byte-wide 32-Pin EPROM pinouts

— 32-pin PDIP

— 32-pin PLCC

— 32-pin TSOP

■ 100,000 write/erase cycles minimum

■ Write and erase voltage 12.0 V −5

■ Latch-up protected to 100 mA from -1 V to VCC +1 V

■ Embedded Erase Electrical Bulk Chip-Erase

— Two seconds typical chip-erase including pre-programming

■ Embedded Program

— 4 µs typical byte-program including time-out

— One second typical chip program

■ Command register architecture for

microprocessor/microcontroller compatible write interface

■ On-chip address and data latches

■ Advanced CMOS flash memory technology

— Low cost single transistor memory cell

■ Embedded algorithms for completely self-timed write/erase operations

供应商 型号 品牌 批号 封装 库存 备注 价格
AMD
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
AMD
22+
PLCC32
8200
原装现货库存.价格优势!!
询价