AM28F256数据手册AMD中文资料规格书

特性 Features

■ High performance\r
— 70 ns maximum access time\r
■ CMOS Low power consumption\r
— 30 mA maximum active current\r
— 100 µA maximum standby current\r
— No data retention power consumption\r
■ Compatible with JEDEC-standard byte-wide 32-Pin EPROM pinouts\r
— 32-pin PDIP\r
— 32-pin PLCC\r
— 32-pin TSOP\r
■ 10,000 write/erase cycles minimum\r
■ Write and erase voltage 12.0 V ±5%\r
■ Latch-up protected to 100 mA from –1 V to VCC +1 V\r
■ Flasherase Electrical Bulk Chip-Erase\r
— One second typical chip-erase\r
■ Flashrite Programming\r
— 10 µs typical byte-program\r
— 0.5 second typical chip program\r
■ Command register architecture for microprocessor/microcontroller compatible write interface\r
■ On-chip address and data latches\r
■ Advanced CMOS flash memory technology\r
— Low cost single transistor memory cell\r
■ Automatic write/erase pulse stop timer\r