AM28F256中文资料256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory数据手册AMD规格书

特性 Features

■ High performance
— 70 ns maximum access time
■ CMOS Low power consumption
— 30 mA maximum active current
— 100 µA maximum standby current
— No data retention power consumption
■ Compatible with JEDEC-standard byte-wide 32-Pin EPROM pinouts
— 32-pin PDIP
— 32-pin PLCC
— 32-pin TSOP
■ 10,000 write/erase cycles minimum
■ Write and erase voltage 12.0 V ±5%
■ Latch-up protected to 100 mA from –1 V to VCC +1 V
■ Flasherase Electrical Bulk Chip-Erase
— One second typical chip-erase
■ Flashrite Programming
— 10 µs typical byte-program
— 0.5 second typical chip program
■ Command register architecture for microprocessor/microcontroller compatible write interface
■ On-chip address and data latches
■ Advanced CMOS flash memory technology
— Low cost single transistor memory cell
■ Automatic write/erase pulse stop timer\r