ALT6725P9数据手册Diodes中文资料规格书

描述 Description

FEATURES
•  InGaP HBT Technology
•  High Efficiency:
•  35 % @ POUT= +27.5 dBm
•  16 % @ POUT= +15 dBm
•  8 % @ POUT= +9 dBm
•  Low Quiescent Current: 4 mA
•  Internal Voltage Regulation
•  Built-in Directional Coupler
•  Common VMODEControl Line
•  Suitable for SMPS and average power tracking systems with variable supply voltages
•  APT can reduce TS.09 average power consumption more than 25%
•  Reduced External Component Count
•  Thin Package: 0.9 mm
•  RoHS Compliant Package, 260°C MSL-3
APPLICATIONS
•  Dual-band Wireless Handsets and Data Devices for LTE/CDMA/EVDO networks:
•  UMTS Band 5, 6, 18, 19, & 26
•  UMTS Band 2 & 25
•  Cellular BC 0 and 10
•  PCS BC 1 and 14

特性 Features

•  InGaP HBT Technology
•  High Efficiency:
•  35 % @ POUT= +27.5 dBm
•  16 % @ POUT= +15 dBm
•  8 % @ POUT= +9 dBm
•  Low Quiescent Current: 4 mA
•  Internal Voltage Regulation
•  Built-in Directional Coupler
•  Common VMODEControl Line
•  Suitable for SMPS and average power tracking systems with variable supply voltages
•  APT can reduce TS.09 average power consumption more than 25%
•  Reduced External Component Count
•  Thin Package: 0.9 mm
•  RoHS Compliant Package, 260°C MSL-3