ALD310708SCL中文资料ALD数据手册PDF规格书

GENERAL DESCRIPTION

ALD310708A/ALD310708 high precision monolithic quad P-Channel

MOSFET arrays are matched at the factory using ALD's proven EPAD®

CMOS technology. This device is available in a quad version and is a

member of the EPAD® Matched Pair MOSFET Family. The

ALD310708A/ALD310708 is a P-channel version of the popular

ALD110808A/ALD110808 Precision Threshold device. Together, these

two MOSFET series enable complementary precision N-Channel and PChannel

MOSFET array based circuits.

Intended for low voltage and low power small signal applications, the

ALD310708A/ALD310708 features precision -0.80V Gate Threshold

Voltage, which enables circuit designs with very low operating voltages

such as 2V power supplies where the circuits operate below the

threshold voltage of the ALD310708A/ALD310708. This feature also

enhances input/output signal operating ranges, especially in very low

operating voltage environments. With these low threshold precision

devices, a circuit with multiple cascading stages can be constructed to

operate at extremely low supply or bias voltage levels. ALD310708A/

ALD310708 also features high input impedance (2.5 x 1010Ω) and high

DC current gain (>108).

ALD310708A/ALD310708 MOSFETs are designed for exceptional

matching of device electrical characteristics. The Gate Threshold Voltage

VGS(th) is set precisely at -0.80V +/-0.02V, featuring a typical offset

voltage of only +/-0.001V (1mV). As these devices are on the same

monolithic chip, they also exhibit excellent temperature tracking

characteristics. They are versatile design components for a broad range

of precision analog applications such as basic building blocks for current

mirrors, matching circuits, current sources, differential amplifier input

stages, transmission gates, and multiplexers. These devices also excel

in limited operating voltage applications such as very low level precision

voltage-clamps. In addition to matched pair electrical characteristics,

each individual MOSFET exhibits individual well controlled manufacturing

characteristics, enabling the user to depend on tight design limits from

different production batches.

APPLICATIONS

• 0.5 precision current mirrors and current sources

• Low Tempco (<= 50ppm/°C) current mirrors/sources

• Energy harvesting circuits

• Very low voltage analog and digital circuits

• Backup battery circuits & power failure detectors

• Precision low level voltage-clamps

• Low level zero-crossing detector

• Source followers and buffers

• Precision capacitive probes and sensor interfaces

• Precision charge detectors and charge integrators

• Discrete differential amplifier input stage

• Peak-detectors and level-shifters

• High-side switches and Sample-and-Hold switches

• Precision current multipliers

• Discrete analog switches / multiplexers

• Discrete voltage comparators

FEATURES & BENEFITS

• Precision matched Gate Threshold Voltages

• Precision offset voltages (VOS):

ALD310708A: 1mV typical

ALD310708: 2mV typical

• Sub-threshold voltage operation

• Low min. operating voltage of less than 0.8V

• Ultra low min. operating current of less than 1nA

• Nano-power operation

• Wide dynamic operating current ranges

• Exponential operating current ranges

• Matched transconductance and output conductance

• Matched and tracked temperature characteristics

• Tight lot-to-lot parametric control

• Positive, zero, and negative VGS(th) tempco bias currents

• Low input capacitance

• Low input/output leakage currents