ALD110904中文资料ALD数据手册PDF规格书

GENERAL DESCRIPTION

ALD110804/ALD110904 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETS matched at the factory using ALD’s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications.

FEATURES

• Enhancement-mode (normally off)

• Precision Gate Threshold Voltage of +0.40V

• Matched MOSFET to MOSFET characteristics

• Tight lot to lot parametric control

• Low input capacitance

• VGS(th) match (VOS) to 10mV

• High input impedance — 1012Ω typical

• Positive, zero, and negative VGS(th) temperature coefficient

• DC current gain >108

• Low input and output leakage currents

APPLICATIONS

• Ultra low power (nanowatt) analog and digital circuits

• Ultra low operating voltage(<0.40V) circuits

• Sub-threshold biased and operated circuits

• Precision current mirrors and current sources

• Nano-Amp current sources

• High impedance resistor simulators

• Capacitive probes and sensor interfaces

• Differential amplifier input stages

• Discrete Voltage comparators and level shifters

• Voltage bias circuits

• Sample and Hold circuits

• Analog and digital inverters

• Charge detectors and charge integrators

• Source followers and High Impedance buffers

• Current multipliers

• Discrete Analog switches / multiplexers