ALD110814中文资料ALD数据手册PDF规格书

GENERAL DESCRIPTION

ALD110814/ALD110914 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETs matched at the factory using ALD’s proven EPAD® CMOS technology. These devices are intended for low voltage, small signal applications.

FEATURES

• Enhancement-mode (normally off)

• Standard Gate Threshold Voltages: +1.40V

• Matched MOSFET-to-MOSFET characteristics

• Tight lot-to-lot parametric control

• Parallel connection of MOSFETs to increase drain currents

• Low input capacitance

• VGS(th) match to 10mV

• High input impedance — 1012Ω typical

• Positive, zero, and negative VGS(th) temperature coefficient

• DC current gain >108

• Low input and output leakage currents

APPLICATIONS

• Precision current mirrors

• Precision current sources

• Voltage choppers

• Differential amplifier input stages

• Discrete voltage comparators

• Voltage bias circuits

• Sample and Hold circuits

• Analog inverters

• Level shifters

• Source followers and buffers

• Current multipliers

• Discrete analog multiplexers/matrices

• Discrete analog switches